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| e PTB 20162 40 Watts, 470-900 MHz RF Power Transistor Description The 20162 is an NPN common emitter RF power transistor intended for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 470-900 MHz Class AB Characteristics 50% Min Collector Efficiency at 40 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power & Efficiency vs. Input Power 60 50 70 60 50 Output Power (Watts) 40 30 20 10 0 0 1 2 3 4 5 6 7 8 201 62 LOT COD E VCC = 25 V ICQ = 200 mA f = 900 MHz 30 20 10 Efficiency 40 Input Power (Watts) Package 20226 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 10.0 80 0.45 -40 to +150 2.2 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20162 Electrical Characteristics (100% Tested) Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain e Conditions IB = 0 A, IC = 50 mA, RBE = 22 VBE = 0 V, IC = 50 mA IC = 0 A, IE = 20 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4.0 20 Typ -- -- 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 40 W, ICQ = 200 mA, f = 900 MHz) Power Output at 1 dB Compression (VCC = 25 Vdc, ICQ = 200 mA, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 60 mA, f1 = 899 MHz, f2 = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 40 W(CW), ICQ = 200 mA, f = 900 MHz--all phase angles at frequency of test) -- -- 30:1 -- Symbol Gpe C P-1dB IMD Min 8.0 50 40 -32 Typ 9.5 -- 45 -35 Max -- -- -- -- Units dB % Watts dBc Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 12 11 Gain (dB) 10 9 8 7 6 860 VCC = 25 V ICQ = 200 mA Pout = 30 W 870 880 890 900 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20162 Uen Rev. C 09-28-98 2 |
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